IXYS Integrated Circuits Division offers new Dual IGBT Gate Driver Also Drives SiC MOSFETs
Announcing the availability of the IX2204 Dual IGBT Gate Driver. The IX2204 features two high current outputs, each capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs have a wide operation voltage range of -10V to +26V. The negative gate drive capability can be used to insure the turn-off of high power IGBTs. The outputs can be paralleled for IGBT gates that require higher drive current. The IX2204 is extremely robust and virtually immune to the voltage transients that are common in high power applications.